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Influences of top electrode reduction potential and operation ambient on the switching characteristics of tantalum oxide resistive switching memories
Ding, Tse-Ming, Chen, Yi-Ju, Jeng, Jiann-Shing, Chen, Jen-SueVolume:
7
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.5006963
Date:
December, 2017
File:
PDF, 6.81 MB
english, 2017