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Control of Ga-oxide interlayer growth and Ga diffusion in SiO 2 /GaN stacks for high-quality GaN-based metal–oxide–semiconductor devices with improved gate dielectric reliability
Yamada, Takahiro, Watanabe, Kenta, Nozaki, Mikito, Yamada, Hisashi, Takahashi, Tokio, Shimizu, Mitsuaki, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, HeijiVolume:
11
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.11.015701
Date:
January, 2018
File:
PDF, 2.41 MB
english, 2018