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Numerical analysis of the reverse blocking enhancement in High-K passivation AlGaN/GaN Schottky barrier diodes with gated edge termination
Bai, Zhiyuan, Du, Jiangfeng, Xin, Qi, Li, Ruonan, Yu, QiLanguage:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2017.12.026
Date:
December, 2017
File:
PDF, 2.92 MB
english, 2017