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Atomic layer-deposited (HfZrO 4 ) 1−x (SiO 2 ) x thin films for gate stack applications
Choi, Pyungho, Baek, Dohyun, Heo, Sung, Choi, ByoungdeogLanguage:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2017.12.020
Date:
December, 2017
File:
PDF, 1.77 MB
english, 2017