Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice
Ming, Fangfei, Johnston, Steve, Mulugeta, Daniel, Smith, Tyler S., Vilmercati, Paolo, Lee, Geunseop, Maier, Thomas A., Snijders, Paul C., Weitering, Hanno H.Volume:
119
Language:
english
Journal:
Physical Review Letters
DOI:
10.1103/PhysRevLett.119.266802
Date:
December, 2017
File:
PDF, 2.23 MB
english, 2017