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Performance of ring oscillators composed of gate-all-around FETs with varying numbers of nanowire channels using TCAD simulation
Kim, Sutae, Kim, Minsuk, Woo, Sola, Kang, Hyungu, Kim, SangsigLanguage:
english
Journal:
Current Applied Physics
DOI:
10.1016/j.cap.2017.12.012
Date:
December, 2017
File:
PDF, 1.13 MB
english, 2017