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Dependence of Al incorporation on growth temperature during laser molecular beam epitaxy of Al x Ga 1−x N epitaxial layers on sapphire (0001)
Tyagi, Prashant, Ramesh, Ch, Kushvaha, S.S., Mishra, Monu, Gupta, Govind, Yadav, B.S., Senthil Kumar, M.Volume:
739
Language:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2017.12.220
Date:
March, 2018
File:
PDF, 1.88 MB
english, 2018