Evaluation of stress stabilities in amorphous In–Ga–Zn–O...

Japanese Journal of Applied Physics 2018 / 02 Vol. 57; Iss. 2S2

Evaluation of stress stabilities in amorphous In–Ga–Zn–O thin-film transistors: Effect of passivation with Si-based resin

Ochi, Mototaka, Hino, Aya, Goto, Hiroshi, Hayashi, Kazushi, Fujii, Mami N., Uraoka, Yukiharu, Kugimiya, Toshihiro
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Volume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.02CB06
Date:
February, 2018
File:
PDF, 1.32 MB
english, 2018
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