Ion-assisted gate recess process induced damage in GaN...

Japanese Journal of Applied Physics 2017 / 04 Vol. 56; Iss. 4S

Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy

Ferrandis, Philippe, Charles, Matthew, Baines, Yannick, Buckley, Julien, Garnier, Gennie, Gillot, Charlotte, Reimbold, Gilles
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Volume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.04CG01
Date:
April, 2017
File:
PDF, 1.75 MB
english, 2017
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