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Characterization of strain relaxation behavior in Si1−x Ge x epitaxial layers by dry oxidation
Jang, Hyunchul, Kim, Byongju, Koo, Sangmo, Park, Seran, Ko, Dae-HongVolume:
71
Language:
english
Journal:
Journal of the Korean Physical Society
DOI:
10.3938/jkps.71.717
Date:
November, 2017
File:
PDF, 987 KB
english, 2017