Forming-free resistive switching characteristics in...

Microelectronic Engineering 2018 / 04 Vol. 190

Forming-free resistive switching characteristics in tantalum oxide and manganese oxide based crossbar array structure

Hu, Quanli, Park, Mi Ra, Abbas, Haider, Kang, Tae Su, Yoon, Tae-Sik, Kang, Chi Jung
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Volume:
190
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2018.01.005
Date:
April, 2018
File:
PDF, 300 KB
english, 2018
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