[IEEE 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Kamakura, Japan (2017.9.7-2017.9.9)] 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - TCAD analysis of SiGe channel FinFET devices
Cho, Jin, Geelhaar, Frank, Rana, Uzma, Vanamurthy, Laks, Sporer, Ryan, Benistant, FrancisYear:
2017
Language:
english
DOI:
10.23919/SISPAD.2017.8085338
File:
PDF, 515 KB
english, 2017