Investigation of BTI characteristics and its behavior on 10...

Microelectronics Reliability 2018 / 02 Vol. 81

Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-V T gate stack

Jin, Minjung, Kim, Kangjung, Kim, Yoohwan, Shim, Hyewon, Kim, Jinju, Kim, Gunrae, Pae, Sangwoo
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Volume:
81
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2017.12.014
Date:
February, 2018
File:
PDF, 1.76 MB
english, 2018
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