Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy
Zhuravlev, K S, Gulyaev, D V, Aleksandrov, I A, Malin, T V, Mansurov, V G, Galitsyn, Yu G, Konfederatova, K.A., Chen, Yen-Chun, Chang, Wen-HaoVolume:
864
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/864/1/012007
Date:
June, 2017
File:
PDF, 952 KB
english, 2017