![](/img/cover-not-exists.png)
PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on $\Delta V_{\mathrm {TH}}$ and Underlying Degradation Mechanisms
Tallarico, Andrea Natale, Stoffels, Steve, Posthuma, Niels, Magnone, Paolo, Marcon, Denis, Decoutere, Stefaan, Sangiorgi, Enrico, Fiegna, ClaudioVolume:
65
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2017.2769167
Date:
January, 2018
File:
PDF, 1.57 MB
english, 2018