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Effects of floating gate structures on the two-dimensional electron gas density and electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
Zhao, Jingtao, Zhao, Zhenguo, Chen, Zidong, Lin, Zhaojun, Xu, FukaiVolume:
71
Language:
english
Journal:
Journal of the Korean Physical Society
DOI:
10.3938/jkps.71.963
Date:
December, 2017
File:
PDF, 737 KB
english, 2017