Improved performance of In 0.83 Ga 0.17 As/InP...

Infrared Physics & Technology 2018 / 03 Vol. 89

Improved performance of In 0.83 Ga 0.17 As/InP photodetectors through modifying the position of In 0.66 Ga 0.34 As/InAs superlattice electron barrier

Shi, Yan-hui, Zhang, Yong-gang, Ma, Ying-jie, Gu, Yi, Chen, Xing-you, Gong, Qian, Du, Ben, Zhang, Jian, Zhu, Yi
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Volume:
89
Language:
english
Journal:
Infrared Physics & Technology
DOI:
10.1016/j.infrared.2017.12.014
Date:
March, 2018
File:
PDF, 678 KB
english, 2018
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