Mechanism of improved electromigration reliability using...

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Journal of Materials Science & Technology 2017 / 12

Mechanism of improved electromigration reliability using Fe-Ni UBM in wafer level package

Gao, Li-Yin, Zhang, Hao, Li, Cai-Fu, Guo, Jingdong, Liu, Zhi-Quan
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Language:
english
Journal:
Journal of Materials Science & Technology
DOI:
10.1016/j.jmst.2017.11.046
Date:
December, 2017
File:
PDF, 2.59 MB
english, 2017
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