Surface roughening of undoped and in situ B-doped SiGe epitaxial layers deposited by using reduced pressure chemical vapor deposition
Kim, Youngmo, Park, Jiwoo, Sohn, HyunchulVolume:
72
Language:
english
Journal:
Journal of the Korean Physical Society
DOI:
10.3938/jkps.72.101
Date:
January, 2018
File:
PDF, 1.60 MB
english, 2018