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Improved interface characteristics of Mo/SiO2/4H-SiC metal-oxide-semiconductor with post-metallization annealing
Lee, Jae-Gil, Kim, Dong-Hwan, Eom, Su-Keun, Roh, Seung-Hyun, Seo, Kwang-Seok, Kim, Hyun-Seop, Kim, Hyungtak, Cha, Ho-Young, Byun, Young-ChulVolume:
72
Language:
english
Journal:
Journal of the Korean Physical Society
DOI:
10.3938/jkps.72.166
Date:
January, 2018
File:
PDF, 2.09 MB
english, 2018