Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling
Panchenko, P V, Rybalka, S B, Malakhanov, A A, Demidov, A A, Krayushkina, E Yu, Shishkina, O AVolume:
917
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/917/8/082010
Date:
November, 2017
File:
PDF, 323 KB
english, 2017