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[IEEE 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Hangzhou, China (2016.10.25-2016.10.28)] 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - The influence mechanism of Al2O3 layer and etching depth on 2DEG sheet density in gate-recessed Al2O3/AlGaN/GaN MOS-HEMTs
Peng Li,, Yan-Rong Cao,, Feng Dai,, Ya-Song Zhang,, Qing Zhu,, Ling Lv,, Ma, Xiao-Hua, Hao, YueYear:
2016
Language:
english
DOI:
10.1109/ICSICT.2016.7998650
File:
PDF, 2.27 MB
english, 2016