Channel-to-Channel Coupling in Normally-Off GaN...

IEEE Electron Device Letters 2018 / 1 Vol. 39; Iss. 1

Channel-to-Channel Coupling in Normally-Off GaN Double-Channel MOS-HEMT

Wei, Jin, Lei, Jiacheng, Tang, Xi, Li, Baikui, Liu, Shenghou, Chen, Kevin J.
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Volume:
39
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2017.2771354
Date:
January, 2018
File:
PDF, 1.05 MB
english, 2018
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