An improved reliability model for Si and GaN power FET

Microelectronics Reliability 2018 / 02 Vol. 81

An improved reliability model for Si and GaN power FET

Golan, Gady, Azoulay, Moshe, Avraham, Tsuriel, Kremenetsky, Ilan, Bernstein, Joseph B.
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Volume:
81
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2017.12.020
Date:
February, 2018
File:
PDF, 2.07 MB
english, 2018
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