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Effect of surface passivation on breakdown voltages of 4H-SiC Schottky barrier diodes
Kang, In Ho, Na, Moon Kyong, Seok, Ogyun, Moon, Jeong Hyun, Kim, H. W., Kim, Sang Cheol, Bahng, Wook, Kim, Nam Kyun, Park, Him-Chan, Yang, Chang HeonVolume:
71
Language:
english
Journal:
Journal of the Korean Physical Society
DOI:
10.3938/jkps.71.652
Date:
November, 2017
File:
PDF, 454 KB
english, 2017