Tungsten oxide ion gel-gated transistors: how structural...

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Tungsten oxide ion gel-gated transistors: how structural and electrochemical properties affect the doping mechanism

Barbosa, Martin, Meng, Xiang, Soavi, Francesca, Santato, Clara, Orlandi, Marcelo Ornaghi
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Year:
2018
Language:
english
Journal:
Journal of Materials Chemistry C
DOI:
10.1039/C7TC04529H
File:
PDF, 1.65 MB
english, 2018
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