Comparisons of SiN Passivation Film Deposited by PE-CVD and...

IEICE Transactions on Electronics 2009 Vol. E92-C; Iss. 5

Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate

OKITA, Hideyuki, MARUI, Toshiharu, HOSHI, Shinichi, ITOH, Masanori, TODA, Fumihiko, MORINO, Yoshiaki, TAMAI, Isao, SANO, Yoshiaki, SEKI, Shohei
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Volume:
E92-C
Year:
2009
Language:
english
Journal:
IEICE Transactions on Electronics
DOI:
10.1587/transele.e92.c.686
File:
PDF, 949 KB
english, 2009
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