Effect of trench structure on reverse characteristics of...

Japanese Journal of Applied Physics 2017 / 12 Vol. 56; Iss. 12

Effect of trench structure on reverse characteristics of 4H-SiC junction barrier Schottky diodes

Konishi, Kumiko, Kameshiro, Norifumi, Yokoyama, Natsuki, Shima, Akio, Shimamoto, Yasuhiro
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Volume:
56
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.56.121301
Date:
December, 2017
File:
PDF, 3.63 MB
english, 2017
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