Exceptional cracking behavior in H-implanted Si/B-doped Si...

Applied Physics Express 2018 / 01 Vol. 11; Iss. 1

Exceptional cracking behavior in H-implanted Si/B-doped Si 0.70 Ge 0.30 /Si heterostructures

Chen, Da, Wang, Dadi, Chang, Yongwei, Li, Ya, Ding, Rui, Li, Jiurong, Chen, Xiao, Wang, Gang, Guo, Qinglei
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Volume:
11
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.11.011301
Date:
January, 2018
File:
PDF, 1.76 MB
english, 2018
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