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Exciton recombination in lasing contributing an opposite abrupt change of the electrical behavior near threshold between GaN- and GaAs- Multi-quantum-well laser diodes
Feng, LieFeng, Wang, SP, Li, Yang, Li, D, Wang, CDLanguage:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/1361-6463/aaa7da
Date:
January, 2018
File:
PDF, 350 KB
english, 2018