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Characterization of Thermally Oxidized SiO2/SiC Interfaces by Leakage Current under High Electric Field, Cathode Luminescence (CL), X-Ray Photoelectron Spectroscopy (XPS) and High-Resolution Rutherford Backscattering Spectroscopy (HR-RBS)
Kiuchi, Yuji, Kitai, Hidenori, Shiomi, Hiromu, Tsujimura, Masatoshi, Nakata, Daisuke, Harada, Shinsuke, Yonezawa, Yoshiyuki, Fukuda, Kenji, Sakamoto, Kunihiro, Yamasaki, Kimiyoshi, Yano, Hiroshi, OkumVolume:
858
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.858.449
Date:
May, 2016
File:
PDF, 842 KB
english, 2016