[IEEE 2017 75th Device Research Conference (DRC) - South...

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[IEEE 2017 75th Device Research Conference (DRC) - South Bend, IN, USA (2017.6.25-2017.6.28)] 2017 75th Annual Device Research Conference (DRC) - Black phosphorus field-effect transistor with record drain current exceeding 1 A/mm

Si, Mengwei, Yang, Lingming, Du, Yuchen, Ye, Peide D.
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Year:
2017
Language:
english
DOI:
10.1109/DRC.2017.7999395
File:
PDF, 357 KB
english, 2017
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