Interface states reduction in atomic layer deposited...

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2018 / 03 Vol. 36; Iss. 2

Interface states reduction in atomic layer deposited TiN/ZrO 2 /Al 2 O 3 /Ge gate stacks

Kolla, Lakshmi Ganapathi, Ding, Yiming, Misra, Durga, Bhat, Navakanta
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Volume:
36
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.5006789
Date:
March, 2018
File:
PDF, 1.61 MB
english, 2018
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