GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope

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IEEE Electron Device Letters 2017

GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope

Li, Wenjun, Brubaker, Matt D., Spann, Bryan T., Bertness, Kris A., Fay, Patrick
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Year:
2017
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2017.2785785
File:
PDF, 836 KB
english, 2017
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