Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2018 / 05 Vol. 36; Iss. 3
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Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures
Klump, Andrew, Zhou, Chuanzhen, Stevie, Frederick A., Collazo, Ramón, Sitar, ZlatkoVolume:
36
Language:
english
Journal:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
DOI:
10.1116/1.5013001
Date:
May, 2018
File:
PDF, 1.13 MB
english, 2018