Quadruple Gate-Embedded T Structured GaN-Based...

IEEE Journal of the Electron Devices Society 2018 / 12 Vol. 6; Iss. 1

Quadruple Gate-Embedded T Structured GaN-Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors

Lee, Ching-Ting, Chen, Wei-Shian, Lee, Hsin-Ying
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Volume:
6
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2017.2769112
Date:
December, 2018
File:
PDF, 1.15 MB
english, 2018
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