Improvement of Charge Injection by Using Separated SiN as...

IEEE Journal of the Electron Devices Society 2018 / 12 Vol. 6; Iss. 1

Improvement of Charge Injection by Using Separated SiN as Charge Trapping Layer in MONOS Charge Trap Flash Memory

Ji, Hao, Wei, Yehui, Ma, Pengfei, Jiang, Ran
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Volume:
6
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2017.2771956
Date:
December, 2018
File:
PDF, 797 KB
english, 2018
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