Ferroelectric Gate AlGaN/GaN E-Mode HEMTs With High...

IEEE Electron Device Letters 2018 / 1 Vol. 39; Iss. 1

Ferroelectric Gate AlGaN/GaN E-Mode HEMTs With High Transport and Sub-Threshold Performance

Zhu, Jiejie, Chen, Lixiang, Jiang, Jie, Lu, Xiaoli, Yang, Ling, Hou, Bin, Liao, Min, Zhou, Yichun, Ma, Xiaohua, Hao, Yue
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Volume:
39
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2017.2778276
Date:
January, 2018
File:
PDF, 865 KB
english, 2018
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