Characterizations of Enhancement-Mode Double...

IEEE Transactions on Electron Devices 2018 / 2 Vol. 65; Iss. 2

Characterizations of Enhancement-Mode Double Heterostructure GaN HEMTs With Gate Field Plates

Lee, Chun-Hsun, Lin, Wei-Ren, Lee, Yu-Hsuan, Huang, Jian-jang
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
65
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2017.2786479
Date:
February, 2018
File:
PDF, 1.06 MB
english, 2018
Conversion to is in progress
Conversion to is failed