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[IEEE 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Kamakura, Japan (2017.9.7-2017.9.9)] 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Modified angelov model for an exploratory GaN-HEMT technology with short, few-fingered gates
Emekar, Sumit, Jha, Jaya, Mukherjee, S., Meer, M., Takhar, K., Saha, D., Ganguly, S.Year:
2017
Language:
english
DOI:
10.23919/SISPAD.2017.8085278
File:
PDF, 670 KB
english, 2017