Pseudomorphic GeSiSn, SiSn and Ge layers in strained...

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Nanotechnology 2018 / 02

Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures

Timofeev, Vyacheslav Alexeyevich, Nikiforov, A I, Tuktamyshev, Artur Raisovich, Mashanov, Vladimir Ivanovich, Loshkarev, Ivan Dmitrievich, Bloshkin, Aleksei A, Gutakovskii, Anton K
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Language:
english
Journal:
Nanotechnology
DOI:
10.1088/1361-6528/aaac45
Date:
February, 2018
File:
PDF, 887 KB
english, 2018
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