Novel Boosting Scheme Using Asymmetric Pass Voltage for...

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IEEE Journal of the Electron Devices Society 2018

Novel Boosting Scheme Using Asymmetric Pass Voltage for Reducing Program Disturbance in 3D NAND Flash Memory

Kwon, Dae Woong, Lee, Junil, Kim, Sihyun, Lee, Ryoongbin, Kim, Sangwan, Kim, Sangwan, Kim, Sangwan, Kim, Sangwan, Lee, Jong-Ho, Park, Byung-Gook
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Year:
2018
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2018.2801219
File:
PDF, 735 KB
english, 2018
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