Accurate Modeling of GaN HEMT RF Behavior Using an...

IEEE Transactions on Microwave Theory and Techniques 2018 / 2 Vol. 66; Iss. 2

Accurate Modeling of GaN HEMT RF Behavior Using an Effective Trapping Potential

Prasad, Ankur, Thorsell, Mattias, Zirath, Herbert, Fager, Christian
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Volume:
66
Language:
english
Journal:
IEEE Transactions on Microwave Theory and Techniques
DOI:
10.1109/tmtt.2017.2748950
Date:
February, 2018
File:
PDF, 2.17 MB
english, 2018
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