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Electrical properties of HfO2/Al2O3 dielectrics fabricated on In0.53Ga0.47As by using atomic layer deposition at low temperatures (100 - 200 ◦C)
Choi, Sungho, Song, Jeongkeun, An, Youngseo, Lee, Changmin, Kim, HyoungsubVolume:
72
Language:
english
Journal:
Journal of the Korean Physical Society
DOI:
10.3938/jkps.72.283
Date:
January, 2018
File:
PDF, 1.10 MB
english, 2018