Electrical Characteristics of T-CNTFET: Partially-Gated...

ECS Journal of Solid State Science and Technology 2018 Vol. 7; Iss. 3

Electrical Characteristics of T-CNTFET: Partially-Gated Channel vs Doping Engineering

Salem, Nada, Ossaimee, Mahmoud, Shaker, Ahmed, Abouelatta, Mohamed
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Volume:
7
Year:
2018
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.0021803jss
File:
PDF, 1.06 MB
english, 2018
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