Growth Mechanism of SiC CVD – Surface Etching by H...

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Journal of Physical Chemistry A 2018 / 02

Growth Mechanism of SiC CVD – Surface Etching by H 2 , H Atoms and HCl

Sukkaew, Pitsiri, Danielsson, Orjan, Ojamäe, Lars
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Language:
english
Journal:
The Journal of Physical Chemistry A
DOI:
10.1021/acs.jpca.7b10800
Date:
February, 2018
File:
PDF, 2.25 MB
english, 2018
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