Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO 2 interface
Chokawa, Kenta, Narita, Tetsuo, Kikuta, Daigo, Kachi, Tetsu, Shiozaki, Koji, Shiraishi, KenjiVolume:
11
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.11.031002
Date:
March, 2018
File:
PDF, 767 KB
english, 2018