Effect of oxygen concentration on resistive switching...

Effect of oxygen concentration on resistive switching behavior in silicon oxynitride film

Chen, Da, Huang, Shihua, He, Lü
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Volume:
38
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/38/4/043002
Date:
April, 2017
File:
PDF, 663 KB
english, 2017
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