Semipolar $(20\bar{2}1)$ GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations
Khoury, Michel, Li, Hongjian, Bonef, Bastien, Kuritzky, Leah Y., Mughal, Asad J., Nakamura, Shuji, Speck, James S., DenBaars, Steven P.Volume:
11
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.11.036501
Date:
March, 2018
File:
PDF, 3.50 MB
english, 2018