The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal–Insulator–Metal (MIM) Devices for Memory Applications
Dueñas, S., Castán, H., García, H., Ossorio, O. G., Domínguez, L. A., Seemen, H., Tamm, A., Kukli, K., Aarik, J.Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-018-6105-0
Date:
February, 2018
File:
PDF, 1.40 MB
english, 2018